1
GATE EE 2011
MCQ (Single Correct Answer)
+2
-0.6
The transistor used in the circuit shown below has a $$\beta $$ of $$30$$ and $${{\rm I}_{CBO}}$$ is negligible. GATE EE 2011 Analog Electronics - Bjt and Mosfet Biasing Question 13 English

If the forward voltage drop of diode is $$0.7V.$$ Then the current through collector will be

A
$$168$$ $$mA$$
B
$$108$$ $$mA$$
C
$$20.54$$ $$mA$$
D
$$5.36$$ $$mA$$
2
GATE EE 2010
MCQ (Single Correct Answer)
+2
-0.6
The transistor circuit shown uses a silicon transistor with $${V_{BE}} = 0.7V,{{\rm I}_C} \approx {{\rm I}_E}$$ and a $$DC$$ current gain of $$100.$$ The value of $${V_0}$$ is GATE EE 2010 Analog Electronics - Bjt and Mosfet Biasing Question 14 English
A
$$4.65$$ $$V$$
B
$$5$$ $$V$$
C
$$6.3$$ $$V$$
D
$$7.32$$ $$V$$
3
GATE EE 2008
MCQ (Single Correct Answer)
+2
-0.6
Two perfectly matched silicon transistors are connected as shown in the figure. Assuming the $$\beta $$ of the transistors to be very high and forward voltage drop to be $$0.7V,$$ the value of current $${\rm I}$$ is (assume diode $$(D)$$ is ideal) GATE EE 2008 Analog Electronics - Bjt and Mosfet Biasing Question 1 English
A
$$0$$ $$mA$$
B
$$3.6$$ $$mA$$
C
$$4.3$$ $$mA$$
D
$$5.7$$ $$mA$$
4
GATE EE 2006
MCQ (Single Correct Answer)
+2
-0.6
Consider the circuit shown in figure. If the $$\beta $$ of the transistor is $$30$$ and $${{\rm I}_{CBO}}$$ is $$20$$ $$nA$$ and the input voltage is $$5V$$ then the transistor would be operating in GATE EE 2006 Analog Electronics - Bjt and Mosfet Biasing Question 2 English
A
Saturation region
B
Active region
C
Break down region
D
Cut-off region
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