1
GATE EE 2011
+2
-0.6
The transistor used in the circuit shown below has a $$\beta$$ of $$30$$ and $${{\rm I}_{CBO}}$$ is negligible. If the forward voltage drop of diode is $$0.7V.$$ Then the current through collector will be

A
$$168$$ $$mA$$
B
$$108$$ $$mA$$
C
$$20.54$$ $$mA$$
D
$$5.36$$ $$mA$$
2
GATE EE 2010
+2
-0.6
The transistor circuit shown uses a silicon transistor with $${V_{BE}} = 0.7V,{{\rm I}_C} \approx {{\rm I}_E}$$ and a $$DC$$ current gain of $$100.$$ The value of $${V_0}$$ is A
$$4.65$$ $$V$$
B
$$5$$ $$V$$
C
$$6.3$$ $$V$$
D
$$7.32$$ $$V$$
3
GATE EE 2008
+2
-0.6
Two perfectly matched silicon transistors are connected as shown in the figure. Assuming the $$\beta$$ of the transistors to be very high and forward voltage drop to be $$0.7V,$$ the value of current $${\rm I}$$ is (assume diode $$(D)$$ is ideal) A
$$0$$ $$mA$$
B
$$3.6$$ $$mA$$
C
$$4.3$$ $$mA$$
D
$$5.7$$ $$mA$$
4
GATE EE 2006
+2
-0.6
Consider the circuit shown in figure. If the $$\beta$$ of the transistor is $$30$$ and $${{\rm I}_{CBO}}$$ is $$20$$ $$nA$$ and the input voltage is $$5V$$ then the transistor would be operating in A
Saturation region
B
Active region
C
Break down region
D
Cut-off region
GATE EE Subjects
Electric Circuits
Electromagnetic Fields
Signals and Systems
Electrical Machines
Engineering Mathematics
General Aptitude
Power System Analysis
Electrical and Electronics Measurement
Analog Electronics
Control Systems
Power Electronics
Digital Electronics
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