1
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
The variation of drain current with gate-to-source voltage $$\left( {{{\rm I}_D} - {V_{GS}}} \right.$$ characteristic$$\left. \, \right)$$ of a MOSFET is shown in Figure. The MOSFET is GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 32 English
A
an n-channel depletion mode device
B
an n-channel enhancement mode device
C
a p-channel depletion mode device
D
a p-channel enhancement mode device
2
GATE EE 1999
MCQ (Single Correct Answer)
+1
-0.3
The enhancement type n-channel MOSFET is represented by the symbol
A
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 34 English Option 1
B
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 34 English Option 2
C
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 34 English Option 3
D
GATE EE 1999 Analog Electronics - Bjt and Mosfet Biasing Question 34 English Option 4
3
GATE EE 1998
MCQ (Single Correct Answer)
+1
-0.3
One of the applications of current mirror is
A
Output current limiting
B
Obtaining a very high current gain
C
Current feedback
D
Temperature stabilized biasing
4
GATE EE 1996
MCQ (Single Correct Answer)
+1
-0.3
The depletion region (or) space charge region (or) transition region in a semiconductor $$p-n$$ junction diode has
A
electrons and holes
B
positive ions and electrons
C
positive and negative ions
D
negative ions and holes
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