1
GATE CSE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
An access sequence of cache block addresses is of length $$N$$ and contains $$n$$ unique block address. The number of unique block addresses between two consecutive accesses to the same block address is bounded above by $$k.$$ What is the miss ratio if the access sequence is passed through a cache of associativity $$A\, \ge \,k$$ exercising least-recently-used replacement policy?
A
$$n/N$$
B
$$1/N$$
C
$$1/A$$
D
$$k/n$$
2
GATE CSE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a $$k$$-way set associative cache, the cache is divided into $$v$$ sets, each of which consists of $$k$$ lines. The lines of a set are placed in sequence one after another. The lines in set $$s$$ are sequenced before the lines in set $$(s+1).$$ The main memory blocks are numbered $$0$$ onwards. The main memory block numbered $$j$$ must be mapped to any one of the cache lines from
A
$${\left( {j\,\,\bmod \,\,v} \right)^ * }k\,\,$$ to $${\left( {j\,\,\bmod \,\,v} \right)^ * }k\, + \,\,\,\,\,\,\left( {k - 1} \right)$$
B
$${\left( {j\,\,\bmod \,\,v} \right)}\,\,$$ to $$\left( {j\,\,\bmod \,\,v} \right)\, + \,\left( {k - 1} \right)$$
C
$${\left( {j\,\,\bmod \,\,k} \right) }\,\,$$ to $$\left( {j\,\,\bmod \,\,k} \right)\, + \,\left( {v - 1} \right)$$
D
$${\left( {j\,\,\bmod \,\,k} \right)^ * }v\,\,$$ to $${\left( {j\,\,\bmod \,\,k} \right)^ * }\,v + \,\left( {v - 1} \right)$$
3
GATE CSE 2012
MCQ (Single Correct Answer)
+1
-0.3
The amount of $$ROM$$ needed to implement a $$4$$ bit multiplier is
A
$$64$$ bits
B
$$128$$ bits
C
$$1$$ $$K$$bits
D
$$2$$ $$K$$bits
4
GATE CSE 2010
MCQ (Single Correct Answer)
+1
-0.3
A main memory unit with a capacity of $$4$$ megabytes is built using $$1M \times 1$$-bit $$DRAM$$ chips. Each $$DRAM$$ chip has $$1K$$ rows of cells with $$1K$$ cells in each row. The time taken for a single refresh operation is $$100$$ nanoseconds. The time required to perform one refresh operation on all the cells in the memory unit is
A
$$100$$ nanoseconds
B
$$100 * {2^{10}}$$ nanoseconds
C
$$100 * {2^{20}}$$ nanoseconds
D
$$3200 * {2^{20}}$$ nanoseconds
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