If the input to the ideal comparator shown in figure is sinusoidal signal of 8V (peak to peak) without any DC component,

If the Op-Amp in the figure is ideal, the output voltage Vout will equal to

The output voltage of the Regulated power supply shown in the figure is

An amplifier without feedback has a voltage gain of 50, input Resistance of 1 k$$\Omega $$ and output Resistance of 2.5

If the differential voltage gain and the common mode voltage gain of a differential Amplifier are 48 dB and 2 dB respect

The circuit shown in figure is best described as a

The oscillator circuit shown in the figure has an ideal inverting Amplifier. It's frequency of Oscillation (in Hz) is

The action of a JFET in its equivalent circuit can be best represented as a

An ideal sawtooth voltage waveform of a frequency 500 Hz and Amplitude 3 V is generated by charging a capacitor of 2 $$\

Generally, the gain of a transistor Amplifier falls at high frequency due to the

Three identical amplifiers with each one having a voltage gain of 50, input Resistance of 1 KΩ and output resistance of

In the amplifier circuit shown in the figure, the values of R1 and R2 are such that the transistor is operating at VCE =

A sinusoidal signal with peak-to-peak amplitude of 1.536V is quantized into 128 levels using a mid-rise uniform quantize

If Eb, the energy per bit of a binary digital signal, is 10-5 watt-sec and the one-sided power spectral density of the w

A signal is sampled at 8 KHz and is quantized using 8-bit uniform quantizer. Assuming $$SN{R_q}$$ for a sinusoidal signa

If S represents the carrier synchronization at the receiver and $$\rho $$ represents the bandwidth efficiency, then the

The input to a linear delta modulator having a step size $$\Delta $$ = 0.628 is a sine wave with frequency fm and peak a

Let $$m\left(t\right)\;=\cos\left[\left(4\mathrm\pi\times10^3\right)t\right]$$ be the message signal and $$c\left(t\righ

Let $$m\left(t\right)\;=\cos\left[\left(4\mathrm\pi\times10^3\right)t\right]$$ be the message signal and $$c\left(t\righ

A DSB-SC signal is to be generated with a carrier frequency fc = 1MHz using a nonlinear device with the input-output cha

The signal flow graph of a system is shown in figure. The transfer function $$\frac{C(s)}{R(s)}$$ of the system is

Let x(t) be the input to a linear, time-invariant system. The required output is 4x(t-2). The transfer function of the s

The approximate Bode magnitude plot of a minimum-phase system is shown in figure. The transfer function of the system is

The zero, input response of a system given by the state space equation $$$\left[ {{{\mathop {{x_1}}\limits^ \bullet } \

A PD controller is used to compensate a system. Compared to the uncompensated system, the compensated system has

The gain margin and the phase margin of a feedback system with G(s)H(s)=$${s \over {{{\left( {s + 100} \right)}^3}}}$$

The gain margin for the system with open-loop transfer function G(s)H(s)=$${{2(1 + s)} \over {{s^2}}}$$ is

Figure shows the Nyquist plot of the open-loop transfer function G(s)H(s) of a system. If G(s)H(s) has one right hand po

The root locus of the system $$$G\left(s\right)H\left(s\right)=\frac K{s\left(s+2\right)\left(s+3\right)}$$$ has the bre

The open-loop transfer function of a unity feedback system is $$$G\left(s\right)=\frac k{s\left(s^2+s+2\right)\left(s+3\

A second-order system has the transfer function $$\frac{C\left(s\right)}{R\left(s\right)}=\frac4{s^2+4s+4}$$. With r(t)

A 0 to 6 counter consist of 3 flip-flops and a combination circuit of 2 input gate(s). The combination circuit consists

The circuit shown in figure is a 4-bit DAC The input bits 0 and 1 are represented by 0 and 5 V respectively. The OP-

The DTL, TTL, ECL and CMOS families of digital ICs are compared in the following 4 columns

The output of the 74 series of TTL gates is taken from a BJT in

A 4 bit ripple counter and a 4 bit synchronous counter are made using flip-flops having a propagation delay of 10 ns eac

In the circuit shown in Figure, A is a parallel in, parallel-out 4-bit register, which loads at the rising edge of the c

With out any additional circuitry, an 8:1 MUX can be used to obtain

The circuit shown in figure has 4 boxes each described by inputs P, Q, R and outputs Y, Z with Y = $$\,P \oplus \,Q\, \

The circuit shown in figure converts

If the functions W, X, Y and Z are as follows W= R+$$\overline P Q + \overline R $$ S X = $$X = PQ\overline R \,\overl

The number of distinct Boolean expressions of 4 variables is

A short-circuited stub is shunt connected to a transmission line as shown in Fig. If $${Z_0} = 50\,\,\Omega $$, the admi

Two identical antennas are placed in the $$\theta = \pi /2$$ plane as shown in figure. The elements have equal amplitud

A rectangular metal wave guide filled with a dielectric material of relative permittivity $${\varepsilon _r} = \,4$$ has

If the electric field intensity associated with a uniform plane electromagnetic wave traveling in a perfect dielectric m

Medium $$1$$ has the electrical permittivity $${\varepsilon _1} = 1.5\,\,{\varepsilon _0}\,\,\,F/m$$ and occupies the re

A uniform plane wave traveling in air is incident on the plane boundary between air and another dielectric medium with $

The depth of penetration of electromagnetic wave in a medium having conductivity $$\sigma $$ at a frequency of 1 KHz is

If the electric field intensity is given by $$\mathrm E=\left(\mathrm x{\widehat{\mathrm u}}_\mathrm x\;+\mathrm y{\wide

The unit of $$\nabla\times\mathrm H$$ is

n-type silicon is obtained by doping silicon with

At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain

An n-type silicon bar 0.1 cm long and $$100\;\mu m^2$$ in cross-sectional area has a majority carrier concentration of $

The electron concentration in a sample of uniformly doped n-type silicon at 300oK varies linearly from $$10^{17}/cm^3$$

Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are

If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which th

For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. V

When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the

The laplace transform of $$i(t)$$ is given by $$I\left( s \right) = {2 \over {s\left( {1 + s} \right)}}$$ As $$t \to \i

In an 8085 microprocessor, the instruction CMP B has been executed while the content of the accumulator is less than tha

Find the Y-parameters (short ciruit admittance parameters) for the network shown in figure.

The driving-point impedance Z(s) of a network has the pole-zero locations as shown in figure. If Z(0) = 3, then Z(s) is

An input voltage $$v(t)$$ $$ = 10\sqrt 2 \,\,\cos \,\,\left( {t + {{10}^0}} \right) + 10\sqrt 5 \,\,\cos \left( {2t + {{

The minimum number of equations required to analyze the circuit shown in Fig.

The impedance parameters Z11 and Z12 of the two-port network in figure are

The current flowing through the resistance R in the circuit in figure has the form P cos 4t, where P is

A series RLC circuit has a resonance frequency of 1 kHz and a quality factor Q = 100. If each R, L and C is doubled from

The circuit is given in figure.Assume that the switch S is in position 1 for a long time and thrown to position 2 at t =

The circuit is given in figure.Assume that the switch S is in position 1 for a long time and thrown to position 2 at t =

A source of angular frequency 1rad/sec has source impedance consisting of $$1\Omega$$ resistance in series with 1H induc

Twelve 1Ω resistances are used as edges to form a cube. The resistance between two diagonally opposite corners of the cu

A sequence $$x\left( n \right)$$ with the $$z$$-transform $$X\left( z \right)$$ $$ = {z^4} + {z^2} - 2z + 2 - 3{z^{ - 4}

Let x(t) be the input to a linear, time-invariant system. The required output is 4x(t - 2). The transfer function of t

The Laplace transform of i(t) tends to $$I\left( s \right)\,\, = \,{2 \over {s\left( {1 + s} \right)}}$$ As $$t \to \i

Let P be linearity, Q be time-invariance, R be causality and S be stability. A discrete time system has the input-outpu

Let x(t) = $$\,2\cos (800\pi t) + \cos (1400\pi t)$$. x(t) is sampled with the rectangular pulse train shown in figure.

The system under consideration is an RC low -pass filter (RC-LPF) with R = 1.0 $$k\Omega $$ and C = 1.0 $$\mu F$$. Let

The system under consideration is an RC low -pass filter (RC-LPF) with R = 1.0 $$k\Omega $$ and C = 1.0 $$\mu F$$. Let