For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. V_SB > 0), the threshold voltage V_T of the MOSFET will

When the gate-to-source voltage (V_GS) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the drain current is observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied V_GS of 1400 mV is

The laplace transform of $$i(t)$$ is given by
$$I\left( s \right) = {2 \over {s\left( {1 + s} \right)}}$$ As $$t \to \infty ,$$ the value of $$i(t)$$ tends to __________.

In an 8085 microprocessor, the instruction CMP B has been executed while the content of the accumulator is less than that of register B. As a result