If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is

The laplace transform of $$i(t)$$ is given by
$$I\left( s \right) = {2 \over {s\left( {1 + s} \right)}}$$ As $$t \to \infty ,$$ the value of $$i(t)$$ tends to __________.

In an 8085 microprocessor, the instruction CMP B has been executed while the content of the accumulator is less than that of register B. As a result