1
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
If the electric field intensity associated with a uniform plane electromagnetic wave traveling in a perfect dielectric medium is given by

$$E\left( {z,\,t} \right) = \,10\,\cos \left( {2\pi \times {{10}^7}\,\,t - 0.1\,\,\pi z} \right)\,$$ volt/m, the velocity of the traveling wave is

A
$$3.00 \times {10^8}\,\,$$ m/sec
B
$$2.00 \times {10^8}\,\,$$ m/sec
C
$$6.28 \times {10^7}\,\,$$ m/sec
D
$$2.00 \times {10^7}\,\,$$ m/sec
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
A rectangular metal wave guide filled with a dielectric material of relative permittivity $${\varepsilon _r} = \,4$$ has the inside dimensions $$3.0\,cm\,\, \times \,\,1.2\,cm$$. The cut-off frequency for the dominant mode is
A
2.5 GHz
B
5.0 GHz
C
10.0 GHz
D
12.5 GHz
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
Two identical antennas are placed in the $$\theta = \pi /2$$ plane as shown in figure. The elements have equal amplitude excitation with 180° polarity difference, operating at wavelength λ. The correct value of the magnitude of the far zone resultant electric field strength normalized with that of a single element, both computed for $$\phi = 0$$ is GATE ECE 2003 Electromagnetics - Antennas Question 38 English
A
$$2\,\cos \left( {{{2\,\pi s} \over \lambda }} \right)$$
B
$$2\,\sin \left( {{{2\,\pi s} \over \lambda }} \right)$$
C
$$2\,\cos \left( {{{\pi s} \over \lambda }} \right)$$
D
$$2\,\sin \left( {{{\pi s} \over \lambda }} \right)$$
4
GATE ECE 2003
MCQ (Single Correct Answer)
+1
-0.3
n-type silicon is obtained by doping silicon with
A
Germanium
B
Aluminum
C
Boron
D
Phosphorus
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