If the electric field intensity is given by $$\mathrm E=\left(\mathrm x{\widehat{\mathrm u}}_\mathrm x\;+\mathrm y{\widehat{\mathrm u}}_\mathrm y+\mathrm z{\widehat{\mathrm u}}_\mathrm z\right)\;\mathrm{volt}/\mathrm m$$, the potential difference between X(2,0,0) and Y(1,2,3) is

The unit of $$\nabla\times\mathrm H$$ is

n-type silicon is obtained by doping silicon with

At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is