1
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
At 300 K, for a diode current of 1 mA, a certain germanium diode requires a
forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias
of 0.718 V. Under the conditions stated above, the closest approximation of the
ratio of reverse saturation current in germanium diode to that in silicon diode is
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
Choose proper substitutes for X and Y to make the following statement correct
Tunnel diode and Avalanche photodiode are operated in X bias and Y bias
respectively.
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of
400 mV, working in saturation is 900 mV, the drain current is observed to be 1
mA. Neglecting the channel width modulation effect and assuming that the
MOSFET is operating at saturation, the drain current for an applied VGS of 1400
mV is
4
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
For an n-channel enhancement type MOSFET, if the source is connected at a
higher potential than that of the bulk (i.e. VSB > 0), the threshold voltage VT of
the MOSFET will
Paper analysis
Total Questions
Analog Circuits
12
Communications
8
Control Systems
11
Digital Circuits
11
Electromagnetics
9
Electronic Devices and VLSI
8
Engineering Mathematics
1
Microprocessors
1
Network Theory
11
Signals and Systems
7
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