1
GATE ECE 2003
MCQ (Single Correct Answer)
+1
-0.3
The unit of $$\nabla\times\mathrm H$$ is
A
Ampere
B
Ampere/meter
C
Ampere/meter2
D
Ampere - meter
2
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
If the electric field intensity is given by $$\mathrm E=\left(\mathrm x{\widehat{\mathrm u}}_\mathrm x\;+\mathrm y{\widehat{\mathrm u}}_\mathrm y+\mathrm z{\widehat{\mathrm u}}_\mathrm z\right)\;\mathrm{volt}/\mathrm m$$, the potential difference between X(2,0,0) and Y(1,2,3) is
A
+1 volt
B
-1 volt
C
+5 volt
D
+6 volt
3
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are operated in X bias and Y bias respectively.
A
X: reverse, Y: reverse
B
X: reverse, Y: forward
C
X: forward, Y: reverse
D
X: forward, Y: forward
4
GATE ECE 2003
MCQ (Single Correct Answer)
+2
-0.6
An n-type silicon bar 0.1 cm long and $$100\;\mu m^2$$ in cross-sectional area has a majority carrier concentration of $$5\times10^{20}/m^3$$ and the carrier mobility is $$0.13\;\;m^2/v-s\;$$ at 300oK. if the charge of an electron is 1.6×10-19 coulomb, then the resistance of the bar is
A
$$10^6\;\Omega$$
B
$$10^4\;\Omega$$
C
$$10^{-1}\;\Omega$$
D
$$10^{-4}\;\Omega$$