1
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown, all the transmission line sections are lossless. The Voltage Standing Wave Ration (VSWR) on the 60W line is
![GATE ECE 2010 Electromagnetics - Transmission Lines Question 21 English](https://gateclass.cdn.examgoal.net/Oi45m6VZj89oKFHUh/Io22r0TFEJG0mWyVNQywXFj7i00aR/xYimrC55p7st5fMeGt3v6h/uploadfile.jpg)
![GATE ECE 2010 Electromagnetics - Transmission Lines Question 21 English](https://gateclass.cdn.examgoal.net/Oi45m6VZj89oKFHUh/Io22r0TFEJG0mWyVNQywXFj7i00aR/xYimrC55p7st5fMeGt3v6h/uploadfile.jpg)
2
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
A plane wave having the electric field component
$$${\overrightarrow E _i} = 24\,\,\cos \,\,\left( {3 \times {{10}^8}\,t - \beta \,y} \right){\widehat a_z}\,\,V/m$$$
and traveling in free space is incident normally on a lossless medium with $$\mu = {\mu _0}$$ and $$\varepsilon = 9\,\,{\varepsilon _0},$$ which occupies the region $$y \ge 0.$$ The reflected magnetic field component is given by
and traveling in free space is incident normally on a lossless medium with $$\mu = {\mu _0}$$ and $$\varepsilon = 9\,\,{\varepsilon _0},$$ which occupies the region $$y \ge 0.$$ The reflected magnetic field component is given by
3
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
The silicon sample with unit cross-sectional area shown below is in thermal
equilibrium. The following information is given: T=300K, electronic charge=1.6x10-
19C, thermal voltage=26mV and electron mobility = 1350cm2/V-s
![GATE ECE 2010 Electronic Devices and VLSI - Semiconductor Physics Question 19 English](https://gateclass.cdn.examgoal.net/examside/questions/bfb2a25e5e9dd86c35e18cefc10fc216ecec398942082a6bd7262ecbb8d93f54.jpg)
The magnitude of the electric field at x=0.5 μm is
4
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
The silicon sample with unit cross-sectional area shown below is in thermal
equilibrium. The following information is given: T=300K, electronic charge=1.6x10-
19C, thermal voltage=26mV and electron mobility = 1350cm2/V-s
![GATE ECE 2010 Electronic Devices and VLSI - Semiconductor Physics Question 18 English](https://gateclass.cdn.examgoal.net/examside/questions/bfb2a25e5e9dd86c35e18cefc10fc216ecec398942082a6bd7262ecbb8d93f54.jpg)
The magnitude of the electron drift current density at x=0.5 μm is
Paper analysis
Total Questions
Analog Circuits
6
Communications
5
Control Systems
6
Digital Circuits
4
Electromagnetics
5
Electronic Devices and VLSI
3
Engineering Mathematics
7
Microprocessors
3
Network Theory
5
Signals and Systems
11
General Aptitude
10
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