1
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown, all the transmission line sections are lossless. The Voltage Standing Wave Ration (VSWR) on the 60W line is GATE ECE 2010 Electromagnetics - Transmission Lines Question 17 English
A
1.00
B
1.64
C
2.50
D
3.00
2
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
A plane wave having the electric field component $$${\overrightarrow E _i} = 24\,\,\cos \,\,\left( {3 \times {{10}^8}\,t - \beta \,y} \right){\widehat a_z}\,\,V/m$$$
and traveling in free space is incident normally on a lossless medium with $$\mu = {\mu _0}$$ and $$\varepsilon = 9\,\,{\varepsilon _0},$$ which occupies the region $$y \ge 0.$$ The reflected magnetic field component is given by
A
$${1 \over {10{\mkern 1mu} \pi }}\cos {\mkern 1mu} {\mkern 1mu} \left( {3 \times {{10}^8}{\mkern 1mu} t - y} \right)\hat a{\,_x}{\mkern 1mu} {\mkern 1mu} A/m$$
B
$${1 \over {20{\mkern 1mu} \pi }}\cos {\mkern 1mu} {\mkern 1mu} \left( {3 \times {{10}^8}{\mkern 1mu} t - y} \right)\hat a{\,_x}{\mkern 1mu} {\mkern 1mu} A/m$$
C
$$ - {1 \over {20{\mkern 1mu} \pi }}\cos {\mkern 1mu} {\mkern 1mu} \left( {3 \times {{10}^8}{\mkern 1mu} t - y} \right)\hat a{\,_x}{\mkern 1mu} {\mkern 1mu} A/m$$
D
$$ - {1 \over {10{\mkern 1mu} \pi }}\cos {\mkern 1mu} {\mkern 1mu} \left( {3 \times {{10}^8}{\mkern 1mu} t - y} \right)\hat a{\,_x}{\mkern 1mu} {\mkern 1mu} A/m$$
3
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10- 19C, thermal voltage=26mV and electron mobility = 1350cm2/V-s GATE ECE 2010 Electronic Devices and VLSI - Semiconductor Physics Question 12 English

The magnitude of the electric field at x=0.5 μm is

A
1 KV/cm
B
5 KV/cm
C
10 KV/cm
D
25 KV/cm
4
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10- 19C, thermal voltage=26mV and electron mobility = 1350cm2/V-s GATE ECE 2010 Electronic Devices and VLSI - Semiconductor Physics Question 11 English

The magnitude of the electron drift current density at x=0.5 μm is

A
2.16x104 A/cm2
B
1.08x104 A/cm2
C
4.32x103 A/cm2
D
6.48x102 A/cm2
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