1
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10- 19C, thermal voltage=26mV and electron mobility = 1350cm2/V-s GATE ECE 2010 Electronic Devices and VLSI - Semiconductor Physics Question 11 English

The magnitude of the electron drift current density at x=0.5 μm is

A
2.16x104 A/cm2
B
1.08x104 A/cm2
C
4.32x103 A/cm2
D
6.48x102 A/cm2
2
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector dopings in atoms/cm3, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?
A
NE = NB = NC
B
NE $$\gg$$ NB and NB > NC
C
NE = NB and NB < NC
D
NE < NB < NC
3
GATE ECE 2010
MCQ (Single Correct Answer)
+1
-0.3
The eigen values of a skew-symmetric matrix are
A
always zero
B
always pure imaginary
C
either zero (or) pure imaginary
D
always real
4
GATE ECE 2010
MCQ (Single Correct Answer)
+1
-0.3
If $$\,{e^y} = {x^{1/x}}\,\,$$ then $$y$$ has a
A
maximum at $$x=e$$
B
minimum $$x=e$$
C
maximum at $$x = {e^{ - 1}}$$
D
minimum $$x = {e^{ - 1}}$$
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