1
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
The silicon sample with unit cross-sectional area shown below is in thermal
equilibrium. The following information is given: T=300K, electronic charge=1.6x10-
19C, thermal voltage=26mV and electron mobility = 1350cm2/V-s
The magnitude of the electron drift current density at x=0.5 μm is
2
GATE ECE 2010
MCQ (Single Correct Answer)
+2
-0.6
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and
collector dopings in atoms/cm3, respectively. If the emitter injection efficiency of
the BJT is close unity, which one of the following conditions is TRUE?
3
GATE ECE 2010
MCQ (Single Correct Answer)
+1
-0.3
The eigen values of a skew-symmetric matrix are
4
GATE ECE 2010
MCQ (Single Correct Answer)
+1
-0.3
If $$\,{e^y} = {x^{1/x}}\,\,$$ then $$y$$ has a
Paper analysis
Total Questions
Analog Circuits
6
Communications
5
Control Systems
6
Digital Circuits
4
Electromagnetics
5
Electronic Devices and VLSI
3
Engineering Mathematics
7
Microprocessors
3
Network Theory
5
Signals and Systems
11
General Aptitude
10
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