In the silicon BJT circuit shown below, assume that the emitter area of transistor Q₁ is half that of transistor Q₂.The value of current I₀ is approximately

The amplifier circuit shown below uses a silicon transistor. The capacitors C_C and C_E can be assumed to be short at signal frequency and the effect of output resistance r₀ can be ignored. If C_E is disconnected from the circuit, which one of the following statements is TRUE?

Consider the common emitter amplifier shown below with the following circuit parameters:

$$\beta = 100,\,{g_m} = 0.3861\,{\rm A}/V,\,{r_0} = \infty ,\,{r_\pi } = 259\,\Omega, $$
$${R_s} = 1\,K\Omega ,{R_B} = 93\,K\Omega ,\,{R_C} = 250\,\Omega, $$
$${R_L} = 1\,K\Omega ,\,{C_1} = \infty \,\,and\,\,{C_2} = 4.7\,\mu F.$$

The Resistance seen by the source Vs is

Consider the common emitter amplifier shown below with the following circuit parameters:

$$\beta = 100,\,{g_m} = 0.3861\,{\rm A}/V,\,{r_0} = \infty ,\,{r_\pi } = 259\,\Omega, $$
$${R_s} = 1\,K\Omega ,{R_B} = 93\,K\Omega ,\,{R_C} = 250\,\Omega, $$
$${R_L} = 1\,K\Omega ,\,{C_1} = \infty \,\,and\,\,{C_2} = 4.7\,\mu F.$$

The lower cut-off frequency due to C₂ is