If $$\overrightarrow{\mathrm A}\;=\;\mathrm{xy}\;{\widehat{\mathrm a}}_\mathrm x\;+\;\mathrm x^2\;{\widehat{\mathrm a}}_\mathrm y$$ then $$\oint\overrightarrow{\mathrm A}.\overrightarrow{\mathrm d}\mathcal l$$ over the path shown in the figure is

The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10^{- 19}C, thermal voltage=26mV and electron mobility = 1350cm²/V-s

The magnitude of the electric field at x=0.5 μm is

The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T=300K, electronic charge=1.6x10^{- 19}C, thermal voltage=26mV and electron mobility = 1350cm²/V-s

The magnitude of the electron drift current density at x=0.5 μm is

In a uniformly doped BJT, assume that N_E, N_B and N_C are the emitter, base and collector dopings in atoms/cm³, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?