1
GATE EE 2012
MCQ (Single Correct Answer)
+1
-0.3
The typical ratio of latching current to holding current in a $$20$$ $$A$$ thyristor is
A
$$5.0$$
B
$$2.0$$
C
$$1.0$$
D
$$0.5$$
2
GATE EE 2011
MCQ (Single Correct Answer)
+1
-0.3
Circuit turn-off time of an $$SCR$$ is defined as the time
A
taken by the $$SCR$$ turn of
B
required for the $$SCR$$ current to become zero
C
for which the $$SCR$$ is reverse biased by the commutation circuit
D
for which the $$SCR$$ is reverse biased to reduce its current below the holding current
3
GATE EE 2010
MCQ (Single Correct Answer)
+1
-0.3
Figure shows a composite switch consisting of a power transistor $$(BJT)$$ in series with a diode. Assuming that the transistor switch and the diode are ideal, the $$I$$-$$V$$ characteristic of the composite switch is GATE EE 2010 Power Electronics - Power Semiconductor Devices Question 17 English
A
GATE EE 2010 Power Electronics - Power Semiconductor Devices Question 17 English Option 1
B
GATE EE 2010 Power Electronics - Power Semiconductor Devices Question 17 English Option 2
C
GATE EE 2010 Power Electronics - Power Semiconductor Devices Question 17 English Option 3
D
GATE EE 2010 Power Electronics - Power Semiconductor Devices Question 17 English Option 4
4
GATE EE 2009
MCQ (Single Correct Answer)
+1
-0.3
An $$SCR$$ is considered to be a semi - controlled device because
A
it can be turned OFF but not ON with a gate pulse
B
it conducts only during one half - cycle of an alternating current wave
C
It can be turned ON but not OFF with a gate pulse
D
it can be turned ON only during one half - cycle of an alternating voltage wave
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