1
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
A bipolar junction transistor $$(BJT)$$ is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the $$BJT.$$
A
both the base - emitter and base-collector junctions are reverse biased
B
the base - emitter junctions is reverse biased, and the base-collector junction is forward biased
C
the base - emitter junction is forward biased, and the base-collector junction is reverse biased
D
both the base - emitter and base-collector junctions are forward biased.
2
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
The triggering circuit of a thyristor is shown in figure. The thyristor requires a gate current of $$10$$ $$mA,$$ for guaranteed turn-on. The value of $$R$$ required for the thyristor to turn on reliably under all conditions of $${V_b}$$ variation is GATE EE 2004 Power Electronics - Power Semiconductor Devices Question 22 English
A
$$10000\,\Omega $$
B
$$1600\,\Omega $$
C
$$1200\,\Omega $$
D
$$800\,\Omega $$
3
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
Figure shows a thyristor with the standard terminations of anode $$(A),$$ cathode $$(K),$$ gate $$(G)$$ and the different junctions named $$J1, J2,$$ and $$J3$$. When the thyristor is turned on and conducting GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 25 English
A
$$J1$$ and $$J2$$ are forward biased and $$J3$$ is reverse biased
B
$$J1$$ and $$J3$$ are forward biased and $$J2$$ is reverse biased
C
$$J1$$ is forward biased and $$J2$$ and $$J3$$ are reverse biased
D
$$J1, J2,$$ and $$J3$$ are all forward biased
4
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
Figure shows a $$MOSFET$$ with an integral body diode. It is employed as a power switching device in the ON and OFF states through appropriate control. The ON and OFF states of the switch are given on the $${V_{DS}} - {{\rm I}_s}$$ plane by GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 24 English
A
GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 24 English Option 1
B
GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 24 English Option 2
C
GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 24 English Option 3
D
GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 24 English Option 4
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