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1

GATE EE 2017 Set 1

For the power semiconductor devices $$IGBT, MOSFET,$$ Diode and Thyristor, which one of the following statements is TRUE?
A
All of the four are majority carrier devices.
B
All the four are minority carrier devices
C
$$IGBT$$ and $$MOSFET$$ are majority carrier devices, whereas Diode and Thyristor are minority carrier devices.
D
$$MOSFET$$ is majority carrier device, whereas $$IGBT,$$ Diode, Thyristor are minority carrier devices.
2

GATE EE 2016 Set 1

Numerical
A steady dc current of 100 A is flowing through a power module (S, D) as shown in Figure (a). The V-I characteristics of the IGBT (S) and the diode (D) are shown in Figures (b) and (c), respectively. The conduction power loss in the power module (S, D), in watts, is ________.

Correct answer is between 169 and 171
3

GATE EE 2014 Set 1

Figure shows four electronic switches $$(i), (ii), (iii)$$ and $$(iv).$$ Which of the switches can block voltages of either polarity (applied between terminals $$‘a’$$ and $$‘b’$$) when the active device is in the OFF state?
A
$$(i), (ii)$$ and $$(iii)$$
B
$$(ii), (iii)$$ and $$(iv)$$
C
$$(ii)$$ and $$(iii)$$
D
$$(i)$$ and $$(iv)$$
4

GATE EE 2012

The typical ratio of latching current to holding current in a $$20$$ $$A$$ thyristor is
A
$$5.0$$
B
$$2.0$$
C
$$1.0$$
D
$$0.5$$
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