For the power semiconductor devices $$IGBT, MOSFET,$$ Diode and Thyristor, which one of the following statements is TRUE?

A steady dc current of 100 A is flowing through a power module (S, D) as shown in Figure (a). The V-I characteristics of the IGBT (S) and the diode (D) are shown in Figures (b) and (c), respectively. The conduction power loss in the power module (S, D), in watts, is ________.

Figure shows four electronic switches $$(i), (ii), (iii)$$ and $$(iv).$$ Which of the switches can block voltages of either polarity (applied between terminals $$‘a’$$ and $$‘b’$$) when the active device is in the OFF state?

The typical ratio of latching current to holding current in a $$20$$ $$A$$ thyristor is