1
GATE EE 2016 Set 1
Numerical
+1
-0
A steady dc current of 100 A is flowing through a power module (S, D) as shown in Figure (a). The V-I characteristics of the IGBT (S) and the diode (D) are shown in Figures (b) and (c), respectively. The conduction power loss in the power module (S, D), in watts, is ________. GATE EE 2016 Set 1 Power Electronics - Power Semiconductor Devices Question 13 English 1 GATE EE 2016 Set 1 Power Electronics - Power Semiconductor Devices Question 13 English 2
Your input ____
2
GATE EE 2014 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Figure shows four electronic switches $$(i), (ii), (iii)$$ and $$(iv).$$ Which of the switches can block voltages of either polarity (applied between terminals $$‘a’$$ and $$‘b’$$) when the active device is in the OFF state? GATE EE 2014 Set 1 Power Electronics - Power Semiconductor Devices Question 14 English
A
$$(i), (ii) $$ and $$(iii)$$
B
$$(ii), (iii) $$ and $$(iv)$$
C
$$(ii)$$ and $$(iii)$$
D
$$(i)$$ and $$(iv)$$
3
GATE EE 2012
MCQ (Single Correct Answer)
+1
-0.3
The typical ratio of latching current to holding current in a $$20$$ $$A$$ thyristor is
A
$$5.0$$
B
$$2.0$$
C
$$1.0$$
D
$$0.5$$
4
GATE EE 2011
MCQ (Single Correct Answer)
+1
-0.3
Circuit turn-off time of an $$SCR$$ is defined as the time
A
taken by the $$SCR$$ turn of
B
required for the $$SCR$$ current to become zero
C
for which the $$SCR$$ is reverse biased by the commutation circuit
D
for which the $$SCR$$ is reverse biased to reduce its current below the holding current
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