1
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by
2
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
A bipolar junction transistor $$(BJT)$$ is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the $$BJT.$$
3
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
The triggering circuit of a thyristor is shown in figure. The thyristor requires a gate current of $$10$$ $$mA,$$ for guaranteed turn-on. The value of $$R$$ required for the thyristor to turn on reliably under all conditions of $${V_b}$$ variation is
4
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
Figure shows a thyristor with the standard terminations of anode $$(A),$$ cathode $$(K),$$ gate $$(G)$$ and the different junctions named $$J1, J2,$$ and $$J3$$. When the thyristor is turned on and conducting
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