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GATE EE 1993
MCQ (Single Correct Answer)
+1
-0.3
The thermal resistance between the body of a power semiconductor device and the ambient is expressed as
A
Voltage across the device divided by current through the device
B
Average power dissipated in the device divided by the square of the $$RMS$$ current in the device
C
Average power dissipted in the device divided by the temperature difference from body to ambient
D
Temperature difference from body to ambient divided by average power dissipated in the divice
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Electric Circuits
Network Elements Transient Response Two Port Networks Sinusoidal Steady State Analysis Network Theorems Three Phase Circuits Graph Theory
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Continuous Time Signal Fourier Transform Miscellaneous Discrete Time Signal Z Transformation Continuous Time Periodic Signal Fourier Series Continuous and Discrete Time Signals Continuous Time Signal Laplace Transform Linear Time Invariant Systems Sampling Theorem
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Circuit Breaker Parameters and Performance of Transmission Lines Switch Gear and Protection High Voltage Dc Transmission Symmetrical Components and Symmetrical and Unsymmetrical Faults Load Flow Studies Per Unit System Power Generation Cost Power System Stability Generating Power Station
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Error Analysis and Measurement Basic of Indicating Instruments Potentiometer and Instrument Transformers Measurement of Resistance and A.C Bridges Measurement of Energy and Power Digital Voltmeters Questions Cathode Ray Oscilloscope
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Choppers and Commutation Techniques Single and Three Phase Rectifier Power Semiconductor Devices Ac Voltage Controllers Inverters
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Analog to Digital and Digital to Analog Converter Microprocessor Sequential Circuits Logic Gates Minimization Logic Families and Memories Boolean Algebra Combinational Circuits
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