1
GATE EE 2010
MCQ (Single Correct Answer)
+1
-0.3
Figure shows a composite switch consisting of a power transistor $$(BJT)$$ in series with a diode. Assuming that the transistor switch and the diode are ideal, the $$I$$-$$V$$ characteristic of the composite switch is GATE EE 2010 Power Electronics - Power Semiconductor Devices Question 19 English
A
GATE EE 2010 Power Electronics - Power Semiconductor Devices Question 19 English Option 1
B
GATE EE 2010 Power Electronics - Power Semiconductor Devices Question 19 English Option 2
C
GATE EE 2010 Power Electronics - Power Semiconductor Devices Question 19 English Option 3
D
GATE EE 2010 Power Electronics - Power Semiconductor Devices Question 19 English Option 4
2
GATE EE 2009
MCQ (Single Correct Answer)
+1
-0.3
An $$SCR$$ is considered to be a semi - controlled device because
A
it can be turned OFF but not ON with a gate pulse
B
it conducts only during one half - cycle of an alternating current wave
C
It can be turned ON but not OFF with a gate pulse
D
it can be turned ON only during one half - cycle of an alternating voltage wave
3
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by
A
a parabola
B
a straight line
C
a rectangular hyperbola
D
an exponentially decaying function
4
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
A bipolar junction transistor $$(BJT)$$ is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the $$BJT.$$
A
both the base - emitter and base-collector junctions are reverse biased
B
the base - emitter junctions is reverse biased, and the base-collector junction is forward biased
C
the base - emitter junction is forward biased, and the base-collector junction is reverse biased
D
both the base - emitter and base-collector junctions are forward biased.
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