1
GATE EE 2010
MCQ (Single Correct Answer)
+1
-0.3
Figure shows a composite switch consisting of a power transistor $$(BJT)$$ in series with a diode. Assuming that the transistor switch and the diode are ideal, the $$I$$-$$V$$ characteristic of the composite switch is
2
GATE EE 2009
MCQ (Single Correct Answer)
+1
-0.3
An $$SCR$$ is considered to be a semi - controlled device because
3
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by
4
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
A bipolar junction transistor $$(BJT)$$ is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the $$BJT.$$
GATE EE Subjects
Browse all chapters by subject
Electric Circuits
Electrical Machines
Engineering Mathematics
Signals and Systems
Power Electronics
Power System Analysis
Digital Electronics
Analog Electronics
Electromagnetic Fields
Control Systems
Electrical and Electronics Measurement
General Aptitude