1
GATE EE 2010
MCQ (Single Correct Answer)
+1
-0.3
Figure shows a composite switch consisting of a power transistor $$(BJT)$$ in series with a diode. Assuming that the transistor switch and the diode are ideal, the $$I$$-$$V$$ characteristic of the composite switch is
2
GATE EE 2009
MCQ (Single Correct Answer)
+1
-0.3
An $$SCR$$ is considered to be a semi - controlled device because
3
GATE EE 2005
MCQ (Single Correct Answer)
+1
-0.3
The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by
4
GATE EE 2004
MCQ (Single Correct Answer)
+1
-0.3
A bipolar junction transistor $$(BJT)$$ is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the $$BJT.$$
Questions Asked from Power Semiconductor Devices (Marks 1)
Number in Brackets after Paper Indicates No. of Questions
GATE EE 2024 (1)
GATE EE 2023 (1)
GATE EE 2022 (1)
GATE EE 2018 (1)
GATE EE 2017 Set 1 (1)
GATE EE 2016 Set 1 (1)
GATE EE 2014 Set 1 (1)
GATE EE 2012 (1)
GATE EE 2011 (1)
GATE EE 2010 (1)
GATE EE 2009 (1)
GATE EE 2005 (1)
GATE EE 2004 (2)
GATE EE 2003 (2)
GATE EE 1998 (3)
GATE EE 1997 (1)
GATE EE 1996 (3)
GATE EE 1995 (1)
GATE EE 1994 (2)
GATE EE 1993 (1)
GATE EE Subjects
Electric Circuits
Electromagnetic Fields
Signals and Systems
Electrical Machines
Engineering Mathematics
General Aptitude
Power System Analysis
Electrical and Electronics Measurement
Analog Electronics
Control Systems
Power Electronics