1
GATE EE 2026
MCQ (Single Correct Answer)
+1
-0

Consider the circuit shown in Figure (a). A gate pulse $v_g$ is applied between time instants $t_0$ and $t_1$. After $t_1$, during the MOSFET turn OFF process, it experiences a voltage overshoot.

GATE EE 2026 Power Electronics - Power Semiconductor Devices Question 2 English 1

GATE EE 2026 Power Electronics - Power Semiconductor Devices Question 2 English 2

Based on the $v_{d s}$ waveforms shown in Figure (b), which one of the following options is correct?

A

$R_1>R_2>R_3$

B

$R_1>R_3>R_2$

C

$R_3>R_2>R_1$

D

$R_2>R_3>R_1$

2
GATE EE 2024
MCQ (Single Correct Answer)
+1
-0.33

If the following switching devices have similar power ratings, which one of them is the fastest?

A

SCR

B

GTO

C

IGBT

D

Power MOSFET

3
GATE EE 2023
MCQ (More than One Correct Answer)
+1
-0

A semiconductor switch needs to block voltage V of only one polarity (V > 0) during OFF state as shown in figure (i) and carry current in both directions during ON state as shown in figure (ii). Which of the following switch combination(s) will realize the same?

GATE EE 2023 Power Electronics - Power Semiconductor Devices Question 4 English

A
GATE EE 2023 Power Electronics - Power Semiconductor Devices Question 4 English Option 1
B
GATE EE 2023 Power Electronics - Power Semiconductor Devices Question 4 English Option 2
C
GATE EE 2023 Power Electronics - Power Semiconductor Devices Question 4 English Option 3
D
GATE EE 2023 Power Electronics - Power Semiconductor Devices Question 4 English Option 4
4
GATE EE 2022
MCQ (Single Correct Answer)
+1
-0.33

A charger supplies 100 W at 20 V for charging the battery of a laptop. The power devices, used in the converter inside the charger, operate at a switching frequency of 200 kHz. Which power device is best suited for this purpose?

A
IGBT
B
Thyristor
C
MOSFET
D
BJT

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