In the circuit shown, transistors Q₁ and Q₂ are biased at a collector current of 2.6 mA. Assuming that transistor current gains are sufficiently large to assume collector current equal to emitter current and thermal voltage of 26m V, the magnitude of voltage gain V_o/V_s in the mid-band frequency range is _____________ (up to second decimal place).

In the voltage reference circuit shown in the figure, the op-amp is ideal and the transistors Q₁, Q₂,….., Q₃₂ are identical in all respects and have infinitely large values of common – emitter current gain $$\beta $$. The collector current (I_C) of the transistors is related to their base emitter voltage (V_BE) by the relation I_C = I_S exp (V_BE/V_T); where I_s is the saturation current. Assume that the voltage V_P shown in the figure is 0.7 V and the thermal voltage V_T=26mV

The output voltage V_out (in volts) is _____.

Consider a binary memoryless channel characterized by the transition probability diagram shown in the figure. The channel is

Consider the random process
x(t) = U + Vt.
Where U is a zero mean Gaussian random variable and V is a random variable uniformly distributed between 0 and 2. Assume that U and V are statistically independent. The mean value of the random process at t = 2 is _________________