An n-channel enhancement mode MOSFET is biased at V_GS > V_TH and V_DS > (V_GS - V_TH), where V_GS is the gate-to-source voltage, V_DS is the drain-to-source voltage and V_TH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a

For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (J_L) is 2.5 mA/cm² and the open-circuit voltage (V$$_{oc}$$) is 0.451 V. consider thermal voltage (V$$_T$$) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged. V$$_{oc}$$ (in volts) will be ______.

An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then

Consider the circuit shown in the figure. Assume base-to-emitter voltage V_BE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transistor is unity. The value of the collector-to–emitter voltage V_CE (in volt) is _______.