1
GATE ECE 2017 Set 2
Numerical
+2
-0
An electron (q1) is moving in free space with velocity 105 m/s towards a stationary electron (q2) far away. The closest distance that this moving electron gets to the stationary electron before the repulsive force diverts its path is ___________ ×10-8m.

[Given, mass of electron m = 9.11×10-31 kg, charge of electron e = -1.6×10-19 C , and permittivity $$\varepsilon_0=\left(1/36\mathrm\pi\right)\times10^{-9}\;\mathrm F/\mathrm m$$].

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2
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An n-channel enhancement mode MOSFET is biased at VGS > VTH and VDS > (VGS - VTH), where VGS is the gate-to-source voltage, VDS is the drain-to-source voltage and VTH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a
A
voltage source with zero output impedance
B
voltage source with non-zero output impedance
C
current source with finite output impedance
D
current source with infinite output impedance
3
GATE ECE 2017 Set 2
Numerical
+2
-0
For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (JL) is 2.5 mA/cm2 and the open-circuit voltage (V$$_{oc}$$) is 0.451 V. consider thermal voltage (V$$_T$$) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged. V$$_{oc}$$ (in volts) will be ______.
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4
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then
A
the effective base width increases and common – emitter current gain increases
B
the effective base width increases and common – emitter current gain decreases
C
the effective base width decreases and common – emitter current gain increases
D
the effective base width decreases and common – emitter current gain decreases
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