Two conducting spheres S1 and S2 of radii a and b (b>a) respectively, are placed far apart and connected by a long, thin conducting wire, as shown in the figure.

For some charge placed on this structure, the potential and surface electric field on S1 are V_a and E_a , and that on S2 are V_b and E_b, respectively, which of the following is CORRECT?

For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (J_L) is 2.5 mA/cm² and the open-circuit voltage (V$$_{oc}$$) is 0.451 V. consider thermal voltage (V$$_T$$) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged. V$$_{oc}$$ (in volts) will be ______.

An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then

Consider the circuit shown in the figure. Assume base-to-emitter voltage V_BE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transistor is unity. The value of the collector-to–emitter voltage V_CE (in volt) is _______.