1
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then
A
the effective base width increases and common – emitter current gain increases
B
the effective base width increases and common – emitter current gain decreases
C
the effective base width decreases and common – emitter current gain increases
D
the effective base width decreases and common – emitter current gain decreases
2
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+1
-0.3
For the circuit shown in the figure, P and Q are the inputs and Y is the output. GATE ECE 2017 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 44 English The logic implemented by the circuit is
A
XNOR
B
XOR
C
NOR
D
OR
3
GATE ECE 2017 Set 2
Numerical
+1
-0
Consider an n-channel MOSFET having width W, length L, electron mobility in the channel $$\mu_n$$ and oxide capacitance per unit area $$C_{ox}$$. If gate-to-source voltage VGS=0.7 V, drain-to source voltage VDS=0.1V, $$\left(\mu_nC_{ox}\right)\;=\;100\;\mu A/V^2$$, threshold voltage VTH=0.3 V and (W/L) = 50, then the transconductance gm (in mA/V) is ___________.
Your input ____
4
GATE ECE 2017 Set 2
MCQ (Single Correct Answer)
+2
-0.6
Assuming that transistor M1 and M2 are identical and have a threshold voltage of 1V, the state of transistors M1 and M2 are respectively GATE ECE 2017 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 6 English
A
Saturation, Saturation
B
Linear, Linear
C
Linear, Saturation
D
Saturation, Linear