An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then

Consider the circuit shown in the figure. Assume base-to-emitter voltage V_BE=0.8 V and common base current gain $$\left(\alpha\right)$$ of the transistor is unity. The value of the collector-to–emitter voltage V_CE (in volt) is _______.

An n-channel enhancement mode MOSFET is biased at V_GS > V_TH and V_DS > (V_GS - V_TH), where V_GS is the gate-to-source voltage, V_DS is the drain-to-source voltage and V_TH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a

Consider an n-channel MOSFET having width W, length L, electron mobility in the channel $$\mu_n$$ and oxide capacitance per unit area $$C_{ox}$$. If gate-to-source voltage V_GS=0.7 V, drain-to source voltage V_DS=0.1V, $$\left(\mu_nC_{ox}\right)\;=\;100\;\mu A/V^2$$, threshold voltage V_TH=0.3 V and (W/L) = 50, then the transconductance g_m (in mA/V) is ___________.