1
MHT CET 2024 2nd May Evening Shift
MCQ (Single Correct Answer)
+1
-0

The potential barrier in p-n junction diode is due to

A
depletion of positive charges near the junction.
B
accumulation of positive charges near the junction.
C
depletion of negative charges near the junction.
D
accumulation of positive and negative charges near the junction.
2
MHT CET 2024 2nd May Evening Shift
MCQ (Single Correct Answer)
+1
-0

The logic gate combination circuit shown in the figure performs the logic function of

MHT CET 2024 2nd May Evening Shift Physics - Semiconductor Devices and Logic Gates Question 54 English

A
OR gate
B
NOR gate
C
XOR gate
D
NAND gate
3
MHT CET 2024 2nd May Morning Shift
MCQ (Single Correct Answer)
+1
-0

In semiconductors at room temperature,

A
the valence band is completely filled.
B
the conduction band is completely empty.
C
the conduction band is partially filled and the valence band is partially empty.
D
the valence band is completely filled and conduction band is partially empty.
4
MHT CET 2024 2nd May Morning Shift
MCQ (Single Correct Answer)
+1
-0

The logic circuit in figure is equivalent to

MHT CET 2024 2nd May Morning Shift Physics - Semiconductor Devices and Logic Gates Question 56 English

A
OR gate
B
AND gate
C
NOR gate
D
NAND gate
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