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1
MHT CET 2026 15th April Morning Shift
MCQ (Single Correct Answer)
+1
-0
Photodiode is a device
A
in which photocurrent is dependent on reverse bias.
B
in which photocurrent is independent of incident radiation.
C
which is always operated in forward bias.
D
which is always operated in reverse bias.
2
MHT CET 2026 15th April Morning Shift
MCQ (Single Correct Answer)
+1
-0
For a p-n junction diode, breakdown voltage occurs when
A
reverse bias is decreased
B
reverse bias is not changed
C
reverse-bias is increased
D
forward bias is increased
3
MHT CET 2026 15th April Morning Shift
MCQ (Single Correct Answer)
+1
-0
If p-n junction diode is forward biased then
A
width of depletion layer decreases.
B
width of depletion layer increases.
C
barrier voltage increases
D
electric conduction is not possible
4
MHT CET 2026 13th April Evening Shift
MCQ (Single Correct Answer)
+1
-0
A pure silicon crystal at temperature $300$ K has electron and hole concentration ($n_i$) $10^{16}$ per m$^3$ each and $10^{21}$ phosphorus atoms ($n_e$) are added per cubic metre. The new hole concentration in silicon crystal is
A
$10^{19}$ per m$^3$
B
$10^{21}$ per m$^3$
C
$10^5$ per m$^3$
D
$10^{11}$ per m$^3$
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