1
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
A transmission line is feeding 1 Watt of power to a horn antenna having gain of 10 dB. The antenna is matched to the transmission line. The total power radiated by the horn antenna into the free-space is
A
10 Watts
B
1 Watt
C
0.1 Watt
D
0.01 Watt
2
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the
A
diffusion current
B
drift current
C
recombination current
D
induced current
3
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:
A
directly proportional to the doping concentration
B
inversely proportional to the doping concentration
C
directly proportional to the intrinsic concentration
D
inversely proportional to the intrinsic concentration
4
GATE ECE 2006
MCQ (Single Correct Answer)
+2
-0.6
An n-channel depletion MOSFET has following two points on its ID − VGS curve:
(i) VGS = 0 at ID = 12 mA and
(ii) VGS = - 6 Volts at ID = 0
Which of the following Q-points will give the highest trans-conductance gain for small signals?
A
VGS = -6 Volts
B
VGS = -3 Volts
C
VGS = 0 Volts
D
VGS = 3 Volts
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