An n-channel depletion MOSFET has following two points on its I_D − V_GS curve:
(i) V_GS = 0 at I_D = 12 mA and
(ii) V_GS = - 6 Volts at I_D = 0
Which of the following Q-points will give the highest trans-conductance gain for small signals?

The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:

Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the

Consider the function $$f(t)$$ having laplace transform
$$F\left( s \right) = {{{\omega _0}} \over {{s^2} + \omega _0^2}},\,\,{\mathop{\rm Re}\nolimits} \left( s \right) > 0.$$ The final value of $$f(t)$$ would be ____________.