1
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
$$\int\int\left(\nabla\times\mathrm P\right)\;\cdot\mathrm{ds}$$ , where is a vector, is equal to
A
$$\mathrm P\times\nabla\times\mathrm P\;-\;\nabla^2\;\mathrm P$$
B
$$\nabla^2\;\mathrm P\;+\;\nabla\left(\nabla\cdot\mathrm P\right)$$
C
$$\nabla^2\;\mathrm P\;+\;\nabla\times\mathrm P$$
D
$$\nabla\left(\nabla\cdot\mathrm P\right)-\nabla^2\;\mathrm P\;$$
2
GATE ECE 2006
MCQ (Single Correct Answer)
+2
-0.6
An n-channel depletion MOSFET has following two points on its ID − VGS curve:
(i) VGS = 0 at ID = 12 mA and
(ii) VGS = - 6 Volts at ID = 0
Which of the following Q-points will give the highest trans-conductance gain for small signals?
A
VGS = -6 Volts
B
VGS = -3 Volts
C
VGS = 0 Volts
D
VGS = 3 Volts
3
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:
A
directly proportional to the doping concentration
B
inversely proportional to the doping concentration
C
directly proportional to the intrinsic concentration
D
inversely proportional to the intrinsic concentration
4
GATE ECE 2006
MCQ (Single Correct Answer)
+1
-0.3
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the
A
diffusion current
B
drift current
C
recombination current
D
induced current
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