Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the

The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:

An n-channel depletion MOSFET has following two points on its I_D − V_GS curve:
(i) V_GS = 0 at I_D = 12 mA and
(ii) V_GS = - 6 Volts at I_D = 0
Which of the following Q-points will give the highest trans-conductance gain for small signals?

For the matrix $$\left[ {\matrix{ 4 & 2 \cr 2 & 4 \cr } } \right].$$ The eigen value corresponding to the eigen vector $$\left[ {\matrix{ {101} \cr {101} \cr } } \right]$$ is