In the transistor amplifier circuit shown in the figure below, the transistor has the following parameters: $${\beta _{DC}}$$ = 60, $${V_{BE}}$$ = 0.7V, $${h_{ie}} \to \,\,\infty $$, $${h_{fe}} \to \,\,\infty $$. The capacitance C_C can be assumed to be infinite.

If $${\beta _{DC}}$$ is increased by 10%, the collector-to emitter voltage drop

In the transistor amplifier circuit shown in the figure below, the transistor has the following parameters: $${\beta _{DC}}$$ = 60, $${V_{BE}}$$ = 0.7V, $${h_{ie}} \to \,\,\infty $$, $${h_{fe}} \to \,\,\infty $$. The capacitance C_C can be assumed to be infinite.

Under the DC conditions, the collector-to emitter voltage drop is

In the transistor amplifier circuit shown in the figure below, the transistor has the following parameters: $${\beta _{DC}}$$ = 60, $${V_{BE}}$$ = 0.7V, $${h_{ie}} \to \,\,\infty $$, $${h_{fe}} \to \,\,\infty $$. The capacitance C_C can be assumed to be infinite.

The small-signal gain of the amplifier $${{{V_c}} \over {{V_s}}}$$ is

An n-channel depletion MOSFET has following two points on its I_D - V_GS curve:

(i)V_GS = 0 at I_d = 12 mA and
(ii)V_GS = -6 Volts at Z_o =$$\infty $$

Which of the following Q-points will give the highest transconductance gain for small signals?