1
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+2
-0.6
The far-zone power density radiated by a helical antenna is approximated as: $$$\overrightarrow W {\,_{rad}} = \overrightarrow W \,average\, \approx \,\widehat a{}_rC{}_0\,{1 \over {{r^2}}}{\cos ^4}\theta $$$

The radiated power density is symmetrical with respect to $$\phi $$ and exists only in the upper hemisphere: $$0 \le \theta \le {\pi \over 2};\,\,\,\,0 \le \theta \le 2\pi ;$$

$${C_0}$$ is a constant. The power radiated by the antenna (in watts) and the maximum directivity of the antenna, respectively, are

A
$$1.5{C_0},\,\,10dB$$
B
$$1.256{C_0},\,\,10dB$$
C
$$1.256{C_0},\,\,12dB$$
D
$$1.5{C_0},\,\,12dB$$
2
GATE ECE 2016 Set 1
Numerical
+1
-0
Concentric spherical shells of radii 2 m, 4 m, and 8 m carry uniform surface charge densities of 20 nC/m2 , −4 nC/m2 and ρs ,respectively. The value of ρs (nC/m2) required to ensure that the electric flux density $$\overrightarrow D=\overrightarrow0$$ at radius 10 m is _________.
Your input ____
3
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
What is the voltage Vout in the following circuit? GATE ECE 2016 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 49 English
A
0 V
B
$$\left(\left|V_T\;of\;PMOS\right|\;+\;V_T\;of\;NMOS\right)/2$$
C
Switching threshold of inverter
D
VDD
4
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 27 English
A
Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor
B
Intrinsic semiconductor doped with trivalent atoms to form n-type semiconductor
C
Intrinsic semiconductor doped with pentavalent atoms to form p-type semiconductor
D
Intrinsic semiconductor doped with trivalent atoms to form p-type semiconductor
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