1
GATE ECE 2016 Set 1
Numerical
+2
-0
Two lossless X-band horn antennas are separated by a distance of $$200\lambda $$. The amplitude reflection coefficients at the terminals of the transmitting and receiving antennas are $$0.15$$ and $$0.18$$, respectively. The maximum directivities of the transmitting and receiving antennas (over the isotropic antenna) are $$18$$ $$dB$$ and $$22$$ $$dB$$, respectively. Assuming that the input power in the lossless transmission line connected to the antenna is $$2$$ $$W$$, and that the antennas are perfectly aligned and polarization matched, the power ( in mW) delivered to the load at the receiver is ________ .
Your input ____
2
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+2
-0.6
The far-zone power density radiated by a helical antenna is approximated as: $$$\overrightarrow W {\,_{rad}} = \overrightarrow W \,average\, \approx \,\widehat a{}_rC{}_0\,{1 \over {{r^2}}}{\cos ^4}\theta $$$

The radiated power density is symmetrical with respect to $$\phi $$ and exists only in the upper hemisphere: $$0 \le \theta \le {\pi \over 2};\,\,\,\,0 \le \theta \le 2\pi ;$$

$${C_0}$$ is a constant. The power radiated by the antenna (in watts) and the maximum directivity of the antenna, respectively, are

A
$$1.5{C_0},\,\,10dB$$
B
$$1.256{C_0},\,\,10dB$$
C
$$1.256{C_0},\,\,12dB$$
D
$$1.5{C_0},\,\,12dB$$
3
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 20 English
A
Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor
B
Intrinsic semiconductor doped with trivalent atoms to form n-type semiconductor
C
Intrinsic semiconductor doped with pentavalent atoms to form p-type semiconductor
D
Intrinsic semiconductor doped with trivalent atoms to form p-type semiconductor
4
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):


P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?
A
P and Q
B
P and S
C
Q and R
D
R and S
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