1
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements for a metal oxide semiconductor field effect transistor
(MOSFET):
P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.
2
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
What is the voltage Vout in the following circuit?
![GATE ECE 2016 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 49 English](https://gateclass.cdn.examgoal.net/examside/questions/2056152dfb57cb7b0167d0726305ccc184e292d658a3686d36a20660f16ebdef.jpg)
3
GATE ECE 2016 Set 1
Numerical
+2
-0
Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source
voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \times {10^{ - 6}}{\rm A}{V^{ - 2}}$$ , the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drain conductance (in micro siemens) is__________.
Your input ____
4
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Let $${M^4} = {\rm I}$$ (where $${\rm I}$$ denotes the identity matrix) and $$M \ne {\rm I},\,\,{M^2} \ne {\rm I}$$ and $${M^3} \ne {\rm I}$$. Then, for any natural number $$k, $$ $${M^{ - 1}}$$ equals:
Paper analysis
Total Questions
Analog Circuits
5
Communications
6
Control Systems
5
Digital Circuits
3
Electromagnetics
6
Electronic Devices and VLSI
4
Engineering Mathematics
8
Microprocessors
1
Network Theory
4
Signals and Systems
8
General Aptitude
2
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