Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):

P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?

What is the voltage V_out in the following circuit?

Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \times {10^{ - 6}}{\rm A}{V^{ - 2}}$$ , the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 V^-1, In the saturation region, the drain conductance (in micro siemens) is__________.

Let $${M^4} = {\rm I}$$ (where $${\rm I}$$ denotes the identity matrix) and $$M \ne {\rm I},\,\,{M^2} \ne {\rm I}$$ and $${M^3} \ne {\rm I}$$. Then, for any natural number $$k, $$ $${M^{ - 1}}$$ equals: