1
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
What is the voltage Vout in the following circuit? GATE ECE 2016 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 49 English
A
0 V
B
$$\left(\left|V_T\;of\;PMOS\right|\;+\;V_T\;of\;NMOS\right)/2$$
C
Switching threshold of inverter
D
VDD
2
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 27 English
A
Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor
B
Intrinsic semiconductor doped with trivalent atoms to form n-type semiconductor
C
Intrinsic semiconductor doped with pentavalent atoms to form p-type semiconductor
D
Intrinsic semiconductor doped with trivalent atoms to form p-type semiconductor
3
GATE ECE 2016 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):


P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?
A
P and Q
B
P and S
C
Q and R
D
R and S
4
GATE ECE 2016 Set 1
Numerical
+2
-0
Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \times {10^{ - 6}}{\rm A}{V^{ - 2}}$$ , the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 V-1, In the saturation region, the drain conductance (in micro siemens) is__________.
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