GATE ECE 2016 Set 1 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2016 Set 1

Numerical

-0

Concentric spherical shells of radii 2 m, 4 m, and 8 m carry uniform surface charge densities of 20 nC/m² , −4 nC/m² and ρ_s ,respectively. The value of ρ_s (nC/m²) required to ensure that the electric flux density $$\overrightarrow D=\overrightarrow0$$ at radius 10 m is _________.

Your input ____

GATE ECE 2016 Set 1

MCQ (Single Correct Answer)

-0.3

What is the voltage V_out in the following circuit? GATE ECE 2016 Set 1 Electronic Devices and VLSI - IC Basics and MOSFET Question 49 English

0 V

$$\left(\left|V_T\;of\;PMOS\right|\;+\;V_T\;of\;NMOS\right)/2$$

Switching threshold of inverter

V_DD

GATE ECE 2016 Set 1

MCQ (Single Correct Answer)

-0.3

A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 27 English

GATE ECE 2016 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 27 English

Intrinsic semiconductor doped with pentavalent atoms to form n-type semiconductor

Intrinsic semiconductor doped with trivalent atoms to form n-type semiconductor

Intrinsic semiconductor doped with pentavalent atoms to form p-type semiconductor

Intrinsic semiconductor doped with trivalent atoms to form p-type semiconductor

GATE ECE 2016 Set 1

MCQ (Single Correct Answer)

-0.3

Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):

P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?

P and Q

P and S

Q and R

R and S

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