A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure?

Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET):

P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?

Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \times {10^{ - 6}}{\rm A}{V^{ - 2}}$$ , the threshold voltage is 0.3V, and the channel length modulation parameter is 0.09 V^-1, In the saturation region, the drain conductance (in micro siemens) is__________.

Let $${M^4} = {\rm I}$$ (where $${\rm I}$$ denotes the identity matrix) and $$M \ne {\rm I},\,\,{M^2} \ne {\rm I}$$ and $${M^3} \ne {\rm I}$$. Then, for any natural number $$k, $$ $${M^{ - 1}}$$ equals: