1
GATE ECE 2015 Set 2
MCQ (Single Correct Answer)
+1
-0.3
The electric field of a uniform plane electromagnetic wave is $$$\vec E = \left( {{{\overrightarrow a }_x} + j4{{\overrightarrow a }_y}} \right)\exp \left[ {j\left( {2\pi \times {{10}^7}t - 0.2z} \right)} \right]$$$

The polarization of the wave is

A
right handed circular
B
right handed elliptical
C
left handed circular
D
left handed elliptical
2
GATE ECE 2015 Set 2
MCQ (Single Correct Answer)
+2
-0.6
The electric field intensity of a plane wave propagating in a lossless non-magnetic medium is given by the following expression
$$\overrightarrow E \left( {z,t} \right) = {\widehat a_x}5\cos \left( {2\pi \times {{10}^9}t + \beta z} \right)$$ $$$ + {\widehat a_y}3\cos \left( {2\pi \times {{10}^9}t + \beta z - {\pi \over 2}} \right)$$$

The type of the polarization is

A
Right hand circular
B
Left hand elliptical
C
Right hand elliptical
D
Linear
3
GATE ECE 2015 Set 2
Numerical
+1
-0
In a source free region in vacuum, if the electrostatic potential $$\varphi\;=\;2x^2\;+y^2+cz^2$$ , the value of constant c must be ________________.
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4
GATE ECE 2015 Set 2
Numerical
+1
-0
A piece of silicon is doped uniformly with phosphorous with a doping concentration of $$10^{16}/cm^2$$. The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$. The conductivity (in S cm-1) of the silicon sample at 300 K is _________________. GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 35 English
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