1
GATE ECE 2015 Set 2
Numerical
+1
-0
An n–type silicon sample is uniformly illuminated with light which generates 1020 electron hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 $$\mathrm\mu$$s.In the steady state, the hole concentration in the sample is approximately 10x , where x is an integer. The value of x is __________________
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2
GATE ECE 2015 Set 2
Numerical
+1
-0
A piece of silicon is doped uniformly with phosphorous with a doping concentration of $$10^{16}/cm^2$$. The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$. The conductivity (in S cm-1) of the silicon sample at 300 K is _________________. GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 21 English
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3
GATE ECE 2015 Set 2
Numerical
+2
-0
A dc voltage of 10V is applied across an n–type silicon bar having a rectangular cross–section and a length of 1cm as shown in figure. The donor doping concentration ND and the mobility of electrons $$\mu$$n are $$10^{16}$$ cm-3 and 1000 cm2 V-1s-1, respectively. The average time (in $$\mu$$s) taken by the electrons to move from one end of the bar to other end is _______________. GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 8 English
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4
GATE ECE 2015 Set 2
Numerical
+2
-0
In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. The permittivities of the semiconductor and the oxide layer are $${\varepsilon _s}$$ and $${\varepsilon _{os}}$$ respectively. Asuuming $${\varepsilon _s}/{\varepsilon _{ox}} = 3$$ , the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is________
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