1
GATE ECE 2015 Set 2
Numerical
+2
-0
Two half-wave dipole antennas placed as shown in the figure are excited with sinusoidally varying currents of frequency 3 MHz and phase shift of $$\pi /2$$ between them (the element at the origin leads in phase). If the maximum radiated E-field at the point P in the x-y plane occurs at an azimuthal angle $${60^ \circ }$$, the distance d (in meters) between the antennas is ___________ .
![GATE ECE 2015 Set 2 Electromagnetics - Antennas Question 28 English](https://imagex.cdn.examgoal.net/r6RaXRrc9wcQUGRC1/0VUn0j6qYps7YwcrsQyw3GwKva6ZE/YYEPymoftxpU0U58cZMNF1/uploadfile.jpg)
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2
GATE ECE 2015 Set 2
Numerical
+1
-0
An n–type silicon sample is uniformly illuminated with light which generates 1020
electron hole pairs per cm3
per second. The minority carrier lifetime in the sample is 1 $$\mathrm\mu$$s.In the
steady state, the hole concentration in the sample is approximately
10x , where x is an integer.
The value of x is __________________
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3
GATE ECE 2015 Set 2
Numerical
+1
-0
A piece of silicon is doped uniformly with phosphorous with a doping concentration of
$$10^{16}/cm^2$$. The expected value of mobility versus doping concentration for silicon assuming
full dopant ionization is shown below. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$.
The
conductivity
(in S cm-1) of the silicon sample at 300 K is _________________.
![GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 28 English](https://gateclass.cdn.examgoal.net/examside/questions/e0f969dce9e946af1c530ede71377f5c879f23bca6c926d81c0d7e8154a10ac2.jpg)
![GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 28 English](https://gateclass.cdn.examgoal.net/examside/questions/e0f969dce9e946af1c530ede71377f5c879f23bca6c926d81c0d7e8154a10ac2.jpg)
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4
GATE ECE 2015 Set 2
Numerical
+2
-0
A dc voltage of 10V is applied across an n–type silicon bar having a rectangular cross–section
and a length of 1cm as shown in figure. The donor doping concentration ND and the mobility of electrons $$\mu$$n are $$10^{16}$$ cm-3 and 1000 cm2 V-1s-1, respectively. The average time (in $$\mu$$s)
taken by the electrons to move from one end of the bar to other end is _______________.
![GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 15 English](https://gateclass.cdn.examgoal.net/examside/questions/d90e20c387ca004b84b7288a14765c78088290ec412f34843afa7cdcadfa4b82.jpg)
![GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 15 English](https://gateclass.cdn.examgoal.net/examside/questions/d90e20c387ca004b84b7288a14765c78088290ec412f34843afa7cdcadfa4b82.jpg)
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Paper analysis
Total Questions
Analog Circuits
7
Communications
5
Control Systems
6
Digital Circuits
5
Electromagnetics
5
Electronic Devices and VLSI
4
Engineering Mathematics
10
Microprocessors
1
Network Theory
4
Signals and Systems
7
General Aptitude
1
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