1
GATE ECE 2015 Set 2
Numerical
+2
-0
A dc voltage of 10V is applied across an n–type silicon bar having a rectangular cross–section
and a length of 1cm as shown in figure. The donor doping concentration ND and the mobility of electrons $$\mu$$n are $$10^{16}$$ cm-3 and 1000 cm2 V-1s-1, respectively. The average time (in $$\mu$$s)
taken by the electrons to move from one end of the bar to other end is _______________.
![GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 15 English](https://gateclass.cdn.examgoal.net/examside/questions/d90e20c387ca004b84b7288a14765c78088290ec412f34843afa7cdcadfa4b82.jpg)
![GATE ECE 2015 Set 2 Electronic Devices and VLSI - Semiconductor Physics Question 15 English](https://gateclass.cdn.examgoal.net/examside/questions/d90e20c387ca004b84b7288a14765c78088290ec412f34843afa7cdcadfa4b82.jpg)
Your input ____
2
GATE ECE 2015 Set 2
Numerical
+2
-0
In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. The permittivities of the semiconductor and the oxide layer are $${\varepsilon _s}$$ and $${\varepsilon _{os}}$$ respectively. Asuuming $${\varepsilon _s}/{\varepsilon _{ox}} = 3$$ , the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is________
Your input ____
3
GATE ECE 2015 Set 2
MCQ (Single Correct Answer)
+1
-0.3
The value of $$'x'$$ for which all the eigenvalues of the matrix given below are real is $$\left[ {\matrix{
{10} & {5 + j} & 4 \cr
x & {20} & 2 \cr
4 & 2 & { - 10} \cr
} } \right]$$
4
GATE ECE 2015 Set 2
Numerical
+2
-0
The value of the integral $$\int_{ - \infty }^\infty {12\,\,\cos \left( {2\pi t} \right){{\sin \left( {4\pi t} \right)} \over {4\pi t}}} dt\,\,$$ is __________.
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Paper analysis
Total Questions
Analog Circuits
7
Communications
5
Control Systems
6
Digital Circuits
5
Electromagnetics
5
Electronic Devices and VLSI
4
Engineering Mathematics
10
Microprocessors
1
Network Theory
4
Signals and Systems
7
General Aptitude
1
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