A piece of silicon is doped uniformly with phosphorous with a doping concentration of $$10^{16}/cm^2$$. The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$. The conductivity (in S cm^-1) of the silicon sample at 300 K is _________________.

A dc voltage of 10V is applied across an n–type silicon bar having a rectangular cross–section and a length of 1cm as shown in figure. The donor doping concentration N_D and the mobility of electrons $$\mu$$n are $$10^{16}$$ cm^-3 and 1000 cm² V^-1s^-1, respectively. The average time (in $$\mu$$s) taken by the electrons to move from one end of the bar to other end is _______________.

In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. The permittivities of the semiconductor and the oxide layer are $${\varepsilon _s}$$ and $${\varepsilon _{os}}$$ respectively. Asuuming $${\varepsilon _s}/{\varepsilon _{ox}} = 3$$ , the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is________

The value of $$'x'$$ for which all the eigenvalues of the matrix given below are real is $$\left[ {\matrix{ {10} & {5 + j} & 4 \cr x & {20} & 2 \cr 4 & 2 & { - 10} \cr } } \right]$$