1
AIPMT 2014
MCQ (Single Correct Answer)
+4
-1
Change Language
The given graph represents V-I characteristic for a semiconductor device.

AIPMT 2014 Physics - Semiconductor Electronics Question 98 English

Which of the following statement is correct ?
A
It is V-I characteristic for solar cell where, point A represents open circuit voltage and point B short circuit current.
B
It is for a solar cell and popints A and B represent open circuit voltage and current, respectively.
C
It is for a photodiode and points A and B represent open circuit voltage and current, respectively.
D
It is for a LED and points A and B represent open circuit voltage and short circuit current, respectively.
2
AIPMT 2014
MCQ (Single Correct Answer)
+4
-1
Change Language
The barrier potential of a p-n junction depends on
(1)   type of semiconductor material
(2)   amount of doping

(3)   temperature

Which one of the following is correct ?
A
(1) and (2) only
B
(2) only
C
(2) and (3) only
D
(1), (2) and (3)
3
NEET 2013 (Karnataka)
MCQ (Single Correct Answer)
+4
-1
Change Language
The output from a NAND gate is divided into two in parallel and fed to another NAND gate. The resulting gate is a

NEET 2013 (Karnataka) Physics - Semiconductor Electronics Question 93 English
A
AND gate
B
NOR gate
C
OR gate
D
NOT gate
4
NEET 2013 (Karnataka)
MCQ (Single Correct Answer)
+4
-1
Change Language
In an unbiased p-n junction, holes diffuse from the p-region to n-region because of
A
The attraction of free electrons of n-region.
B
The higher hole concentration in p-region than that in n-region.
C
The higher concentration of electrons in the n-region than that in the p-region.
D
The potential difference across the p-n junction.
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