Semiconductor Electronics · Physics · NEET

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MCQ (Single Correct Answer)

NEET 2023 Manipur
On the basis of electrical conductivity, which one of the following material has the smallest resistivity?
NEET 2023 Manipur
The given circuit is equivalent to: ...
NEET 2023 Manipur
A p-type extrinsic semiconductor is obtained when Germanium is doped with:
NEET 2023 Manipur
The above figure shows the circuit symbol of a transistor. Select the correct statements given below: (A) The transistor has two segments of p-type s...
NEET 2023
Given below are two statements: Statement I : Photovoltaic devices can convert optical radiation into electricity. Statement II : Zener diode is desig...
NEET 2023
A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these compon...
NEET 2023
For the following logic circuit, the truth table is: ...
NEET 2022 Phase 2
Identify the equivalent logic gate represented by the given circuit...
NEET 2022 Phase 2
The incorrect statement about the property of a Zener diode is :
NEET 2022 Phase 2
The collector current in a common base amplifier using n-p-n transistor is 24 mA. If 80% of the electrons released by the emitter is accepted by the c...
NEET 2022 Phase 1
In the given circuits (a), (b) and (c), the potential drop across the two p-n junctions are equal in...
NEET 2022 Phase 1
As the temperature increases, the electrical resistance
NEET 2022 Phase 1
In half wave rectification, if the input frequency is 60 Hz, then the output frequency would be
NEET 2022 Phase 1
The truth table for the given logic circuit is...
NEET 2021
Consider the following statements (A) and (B) and identify the correct answer.(A) A Zener diode is connected in reverse bias, when used as a voltage r...
NEET 2021
The electron concentration in an n-type semiconductor is the same as hole concentration in a p-type semiconductor. An external field (electric) is app...
NEET 2021
For the given circuit, the input digital signals are applied at the terminals A, B and C. What would be the output at the terminal y? ...
NEET 2020 Phase 1
For transistor action, which of the following statements is correct?
NEET 2020 Phase 1
The increase in the width of the depletion region in a p-n junction diode is due to :
NEET 2020 Phase 1
For the logic circuit shown, the truth table is : ...
NEET 2019
The correct Boolean operation represented by the circuit diagram drawn is : ...
NEET 2019
For a p-type semiconductor, which of the following statements is true?
NEET 2018
In the circuit shown in the figure, the input voltage Vi is 20 V, VBE = 0 and VCE = 0. The values of IB , IC and $$\beta $$ are given by ...
NEET 2018
In the combination of the following gates the output Y can be written in terms of inputs A and B as ...
NEET 2018
In a p-n junction diode, change in temperature due to heating
NEET 2017
Which one of the following represents forward bias diode ?
NEET 2017
In a common emitter transistor amplifier the audio sgnal voltage across the collector is 3 V. The resistance of collector is 3 k$$\Omega $$. If curren...
NEET 2017
The given electrical network is equivalent to ...
NEET 2016 Phase 2
For CE transistor amplifier, the aufio signal voltage across the collector resistance of 2 k$$\Omega $$ is 4 V. If the current amplification factor of...
NEET 2016 Phase 2
The given circuit has two ideal diodes connected as shown in the figure. The current flowing through the resistance R1 will be ...
NEET 2016 Phase 2
What is the output Y in the following circuit, when all the three inputs A, B, C are first 0 and then 1 ? ...
NEET 2016 Phase 1
To get output 1 for the following circuit, the correct choice for the input is ...
NEET 2016 Phase 1
A npn transistor is connected in common emitter configuration in a given amplifier. A load resistance of 800 $$\Omega $$ is connected in the collector...
NEET 2016 Phase 1
Consider the junction diode as ideal. The value of current flowing through AB is ...
AIPMT 2015
The input signal given to a CE amplifier having a voltage gain of 150 is Vi = 2cos(15t + $${\pi \over 3}$$). The corresponding output signal will be ...
AIPMT 2015
In the given figure, a diode D is connected to an external resistance R = 100 $$\Omega $$ and an e.m.f. of 3.5 V. If the barrier potential developed a...
AIPMT 2015 Cancelled Paper
Which logic gate is represented by the following combination of logic gates ? ...
AIPMT 2015 Cancelled Paper
If in a p-n junction, a square input signal of 10 V is applied, as shown, then the output across RL will be...
AIPMT 2014
The given graph represents V-I characteristic for a semiconductor device. Which of the following statement is correct ? ...
AIPMT 2014
The barrier potential of a p-n junction depends on (1)   type of semiconductor material (2)   amount of doping (3)   t...
NEET 2013 (Karnataka)
The output from a NAND gate is divided into two in parallel and fed to another NAND gate. The resulting gate is a ...
NEET 2013 (Karnataka)
In an unbiased p-n junction, holes diffuse from the p-region to n-region because of
NEET 2013 (Karnataka)
One way in which the operation of a n-p-n transistor differs from that of a p-n-p
NEET 2013
In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and current gain 25. If the above transi...
NEET 2013
In a n-type semiconductor, which of the following statement is true.
NEET 2013
The output (X) of the logic circuit shown ion figure will be ...
AIPMT 2012 Mains
The input resistance of a silicon transistor is 100 $$\Omega $$. Base current is changed by 40 $$\mu $$A which results in a change in collector curren...
AIPMT 2012 Mains
To get an output Y= 1 in given circuit which of the following input will be correct ? ...
AIPMT 2012 Prelims
Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is ...
AIPMT 2012 Prelims
In a CE transistor amplifier, the audio signal voltage across the collector resistance of 2 k$$\Omega $$ is 2 V. If the base resistance is 1 k$$\Omega...
AIPMT 2012 Prelims
C and Si both have same lattice structure; having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is...
AIPMT 2012 Prelims
Transfer characteristics [output voltage (V0) vs input voltage (Vi)] for a base biased transistor in CE configuration is as shown in the figure. For u...
AIPMT 2012 Prelims
The figure shows a logic circuit with two inputs A and B and the output C. The voltage wave forms across A, B and C are as given. The logic circuit g...
AIPMT 2011 Mains
A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is ...
AIPMT 2011 Mains
In the following figure, the diodes which are forward biased, are ...
AIPMT 2011 Mains
Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5 $$ \times $$ 1016 m$$-$$3. Doping by indium increases nh to 4.5...
AIPMT 2011 Prelims
A transistor is operated in common emitter configuration at VC = 2 V such that a change in the base current from 100 $$\mu $$A to 300 $$\mu $$A produc...
AIPMT 2011 Prelims
Symbolic representation of four logic gates are shown as Pick out which ones are for AND, NAND and NOT gates, respectively...
AIPMT 2011 Prelims
If a small amount of antimony is added to germanium crystal
AIPMT 2011 Prelims
In forward biasing of the p-n junction
AIPMT 2010 Mains
The following figure shows a logic gate circuit with two inputs A and B and the output Y. The voltage waveforms of A, B and Y are as given. The logi...
AIPMT 2010 Mains
For transistor action (1)  Base, emitter and collector regions should have similar size and doping concentrations. (2)  The base ...
AIPMT 2010 Prelims
To get an output Y = 1 in given circuit which of the following input will be correct ? ...
AIPMT 2010 Prelims
Which one of the following statement is false ?
AIPMT 2010 Prelims
The device that can act as a complete electronic circuit is
AIPMT 2010 Prelims
Which one of the following bonds produces a solid that reflects light in the visible region and whose electrical conductivity decreases with temperat...
AIPMT 2010 Prelims
A common emitter amplifier has a voltage gain of 50, an input impedance of 100 $$\Omega $$ and an output impedance of 200 $$\Omega $$. The power gain ...
AIPMT 2009
The symbolic representation of four logic gates are given below The logic symbols for OR, NOT and NAND gates are respectively...
AIPMT 2009
A transistor is operated in common-emitter configuration at VC = 2V such that a change in the base current from 100 $$\mu $$A to 200 $$\mu $$A produce...
AIPMT 2009
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength
AIPMT 2009
Sodium has body centred packing. Distance between two nearest atoms is 3.7 $$\mathop A\limits^ \circ $$. The lattice parameter is
AIPMT 2008
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearl...
AIPMT 2008
The voltage gain of an amplifier with 9% negative feedback is 10. The voltage gain without feedback will be
AIPMT 2008
If the lattice parameter for a crystalline structure is 3.6 $$\mathop A\limits^ \circ $$, then the atomic radius in fcc crystal is
AIPMT 2007
Which one of the following represents forward bias diode ?
AIPMT 2007
In the following circuit, the output Y for all possible inputs A and B is expressed by the truth table. ...
AIPMT 2007
In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is ...
AIPMT 2007
For a cubic crystal structure which one of the following relations indicating the cell characteristics is correct ?
AIPMT 2006
The following figure shows a logic gate circuit with two inputs A and B and the output C. The voltage waveforms of A, B and C are as shown below. ...
AIPMT 2006
A transistor is operated in common emitter configuration at constant collector voltage VC = 1.5 V such that a change in the base current from 100 $$\m...
AIPMT 2006
Which one of the following represents forward bias diode ?
AIPMT 2005
Choose the only false statement from the following.
AIPMT 2005
Application of a forward bias to a p-n junction
AIPMT 2005
Zener diode is used for
AIPMT 2005
Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented...
AIPMT 2005
Copper has face centered cubic (fcc) lattice with interatomic spacing equal to 2.54 $$\mathop A\limits^ \circ $$. The value of lattice constant for t...
AIPMT 2005
In a p-n junction photo cell, the value of the photo-electromotive force profuced by monochromatic light is proportional to
AIPMT 2004
The peak voltage in the output of a half wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The d.c. component of the output vo...
AIPMT 2004
In semiconductors at a room temperature
AIPMT 2004
Of the diodes shown in the following diagrams, which one is reverse biased ?
AIPMT 2004
The output of OR gate is 1
AIPMT 2003
Reverse bias applied to a junction diode
AIPMT 2003
A n-p-n transistor conducts when
AIPMT 2003
If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will be
AIPMT 2003
Barrier potential of a p-n junction diode does not depened on
AIPMT 2002
Number of atom per unit cell in B.C.C.
AIPMT 2002
For a transistor $${{{I_C}} \over {{I_E}}}$$ = 0.96, then current gain for common emitter is
AIPMT 2002
In a p-n junction
AIPMT 2002
The given truth table is for which logic gate               $$\matrix{ A &am...
AIPMT 2002
For the given circuit of p-n junction diode which is correct ...
AIPMT 2001
The given truth table is for which logic gate               $$\matrix{ A &am...
AIPMT 2001
For a common base circuit if $${{{I_C}} \over {{I_E}}}$$ = 0.98 then current gain for common emitter circuit will be
AIPMT 2001
The current in the circuit will be ...
AIPMT 2000
The cations and anions are arranged in alternate form in
AIPMT 2000
From the following diode circuit, which diode is in forward biased condition
AIPMT 2000
The correct relation for $$\alpha $$, $$\beta $$ for a transistor
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