1
AIPMT 2011 Prelims
MCQ (Single Correct Answer)
+4
-1
In forward biasing of the p-n junction
A
the positive terminal of the battery is connected to p-side and the depletion region becomes thick.
B
the positive terminal of the battery is connected to n-side and the depletion region becomes thin.
C
the positive terminal of the battery is connected to n-side and the depletion region becomes thick.
D
the positive terminal of the battery is connected to p-side and the depletion region becomes thin.
2
AIPMT 2011 Prelims
MCQ (Single Correct Answer)
+4
-1
If a small amount of antimony is added to germanium crystal
A
it becomes a p-type semiconductor
B
the antimony becomes an acceptor atom
C
there will be more free electrons than holes in the semiconductor
D
its resistance is increased
3
AIPMT 2011 Prelims
MCQ (Single Correct Answer)
+4
-1
Symbolic representation of four logic gates are shown as

AIPMT 2011 Prelims Physics - Semiconductor Electronics Question 80 English

Pick out which ones are for AND, NAND and NOT gates, respectively
A
(ii), (iii) and (iv)
B
(iii), (ii) and (i)
C
(iii), (ii) and (iv)
D
(ii), (iv) and (iii)
4
AIPMT 2011 Prelims
MCQ (Single Correct Answer)
+4
-1
Out of Syllabus
A transistor is operated in common emitter configuration at VC = 2 V such that a change in the base current from 100 $$\mu $$A to 300 $$\mu $$A produces a change in the collector current from 10 mA to 20 mA. The current gain is
A
50
B
75
C
100
D
25
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