The emitter junction injects minority carries into the base region of the p-n-p

The emitter injects holes into the base of the p-n-p and electrons into the base region of n-p-n

The emitter injects holes into the base of n-p-n

The emitter junction is reversed biased in n-p-n

The attraction of free electrons of n-region.

The higher hole concentration in p-region than that in n-region.

The higher concentration of electrons in the n-region than that in the p-region.

The potential difference across the p-n junction.

Holes are minority carries and pentavalent atoms are dopants.

Holes are majority carries and trivalent atoms are dopants.

Electrons are majority carries and trivalent atoms are dopants.

Electrons are minority carriers and pentavalent atoms are dopants.

X = A . B

X = $$\overline {A + B} $$

X = $$\overline {\overline A } .\overline {\overline B } $$

X = $$\overline {A.B} $$