Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5 $$ \times $$ 1016 m$$-$$3. Doping by indium increases nh to 4.5 $$ \times $$ 1022 m$$-$$3. The doped semiconductor is of
A
p-type having electron concentration ne = 5 $$ \times $$ 109 m$$-$$3
B
n-type with electron concentration ne = 5 $$ \times $$ 1022 m$$-$$3
C
p-type with electron concentration ne = 2.5 $$ \times $$ 1010 m$$-$$3
D
n-type with electron concentration ne = 2.5 $$ \times $$ 1023 m$$-$$3
2
AIPMT 2011 Mains
MCQ (Single Correct Answer)
+4
-1
In the following figure, the diodes which are forward biased, are
A
(A), (B) and (D)
B
(C) only
C
(C) and (A)
D
(B) and (D)
3
AIPMT 2011 Mains
MCQ (Single Correct Answer)
+4
-1
A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is
A
5 mA
B
10 mA
C
15 mA
D
20 mA
4
AIPMT 2011 Prelims
MCQ (Single Correct Answer)
+4
-1
In forward biasing of the p-n junction
A
the positive terminal of the battery is connected to p-side and the depletion region becomes thick.
B
the positive terminal of the battery is connected to n-side and the depletion region becomes thin.
C
the positive terminal of the battery is connected to n-side and the depletion region becomes thick.
D
the positive terminal of the battery is connected to p-side and the depletion region becomes thin.
